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merging Memory & Logic Solutions Inc.
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM641FV8FT Series
Low Power, 512Kx8 SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft 2'nd Draft Add Pb-free part number
Draft Date
May 25 , 2003 February 13 , 2004
Remark
Preliminary
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160 Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1
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FEATURES
* * * * * * Process Technology : 0.18m Full CMOS Organization : 512K x 8 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min) Three state output and TTL Compatible Package Type : 32-TSOP1
EM641FV8FT Series
Low Power, 512Kx8 SRAM
GENERAL DESCRIPTION
The EM641FV8FT families are fabricated by EMLSI's advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family EM641FV8FT Operating Temperature Industrial (-40 ~ 85oC) Vcc Range Speed Standby (ISB1 , Typ) 1 A2) Operating (I CC1.Max) 3 mA PKG Type
2.7V~3.6V
551) / 70ns
32- TSOP1
1. The parameter is measured with 30pF test load. 2. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.
PIN DESCRIPTION
A11 A9 A8 A13 WE A17 A15 VCC A18 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 OE A10 CS IO8 IO7 IO6 IO5 IO4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
23 22 21 20 19 18 17
Row S elect
32 - TSOP Type1 - Forward
26 25 24
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
VC C VSS
Memory Array 2048 x 2048
I/O1 ~ I/O4 I/O5 ~ I/O8
Data Cont Data Cont
I/O Circuit Column Select
Name CS OE A 0 ~A18 I/O1 ~I/O 8
Function Chip select inputs Output Enable input Address Inputs Data Inputs/outputs
Name WE Vcc Vss NC
Function Write Enable input Power Supply Ground
W E A A A13 A1 A A A A 11 12 4 15 16 17 18
No Connection
O E CS
Control Logic
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ABSOLUTE MAXIMUM RATINGS * Parameter
Voltage on Any Pin Relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Operating Temperature
EM641FV8FT Series
Low Power, 512Kx8 SRAM
Symbol
VIN , VOUT VCC PD TA
Ratings
-0.2 to Vcc+0.3(Max.4.0V) -0.2 to 4.0V 1.0 -40 to 85
Unit
V V W
oC
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS H L L L OE X H L X WE X H H L I/O High-Z High-Z Data Out Data In Mode Deselected Output Disabled Read Write Power Stand by Active Active Active
Note: X means don't care. (Must be low or high state)
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RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter Supply voltage Ground Input high voltage Input low voltage
1. 2. 3. 4.
EM641FV8FT Series
Low Power, 512Kx8 SRAM
Symbol VCC VSS VIH VIL
Min 2.7 0 2.2 -0.2 3)
Typ 3.3 0 -
Max 3.6 0 VCC + 0.22) 0.6
Unit V V V V
TA= -40 to 85oC, otherwise specified Overshoot: VCC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE 1) (f =1MHz, TA=25oC)
Item Input capacitance Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol C IN CIO
Test Condition VIN=0V VIO =0V
Min -
Max 8 10
Unit pF pF
DC AND OPERATING CHARACTERISTICS
Parameter Input leakage current Output leakage current Operating power supply Symbol ILI ILO ICC I CC1 Average operating current I CC2 Output low voltage Output high voltage Standby Current (TTL) VOL VOH ISB
Cycle time = Min, I IO =0mA, 100% duty, CS= VIL , V IN=V IL or V IH I OL = 2.1mA I O H = -1.0mA CS=VIH , Other inputs=VIH or VIL CS>V CC -0.2V, V IN=V SS to V CC CS=VIH or OE = VIH or WE=V IL, VIO =VSS to V CC I IO=0mA, CS = VIL , VIN = VIH or V IL Cycle time=1s, 100% duty, I IO=0mA, CS<0.2V, V I N<0.2V or V IN> V CC-0.2V
Test Conditions
Min -1 -1 55ns 70ns 2.4 LL LF
Typ -
Max 1 1 3 3 25 20 0.4 0.3
Unit A A mA mA
mA V V mA
Other inputs=0~VCC
o
Standby Current (CMOS)
ISB1
(Typ. condition : V C C=3.3V @ 25 oC) (Max. condition : V CC=3.6V @ 85 C)
-
11)
12
A
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25o C and not 100% tested.
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AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference) Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5ns Input and Output reference Voltage : 1.5V Output Load (See right) : CL = 100pF+ 1 TTL CL 1) = 30pF + 1 TTL 1. Including scope and Jig capacitance 2. R1 =3070, R 2 =3150 3. VTM=2.8V
EM641FV8FT Series
Low Power, 512Kx8 SRAM
VTM 3) R12)
CL1)
R22)
READ CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40oC to +85oC)
Parameter
Read cycle time Address access time Chip select to output Output enable to valid output Chip select to low-Z output Output enable to low-Z output Chip disable to high-Z output Output disable to high-Z output Output hold from address change
Symbol
tRC tAA tco tO E tLZ tOLZ tHZ tOHZ tOH
55ns Min 55 10 5 0 0 10 Max 55 55 25 20 20 Min 70 10 5 0 0 10
70ns Max 70 70 35 25 25 -
Unit
ns ns ns ns ns ns ns ns ns
WRITE CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Write cycle time Chip select to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to ouput high-Z Data to write time overlap Data hold from write time End write to output low-Z
Symbol
tWC tCW tAs tAW tWP tWR tWHZ tDW tDH tOW
55ns Min 55 45 0 45 40 0 0 25 0 5 Max 20 Min 70 60 0 60 50 0 0 30 0 5
70ns Max 20
Unit
ns ns ns ns ns ns ns ns ns ns
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TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1).
EM641FV8FT Series
Low Power, 512Kx8 SRAM
(Address Controlled, CS=OE=V IL, WE=V IH )
tRC Address tAA tOH Data Out
Previous Data Valid Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC Address tAA CS tCO tOH
tHZ tOE OE tOLZ Data Out High-Z
Data Valid
tOHZ
tLZ
NOTES (READ CYCLE) 1. t HZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels. 2. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ(Min.) both for a given device and from device to device interconnection.
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TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC Address tCW (2) CS tA W tWP (1) WE tAS(3) Data in High-Z tDW
EM641FV8FT Series
Low Power, 512Kx8 SRAM
tWR(4)
tDH High-Z tOW
Data Valid
tWHZ Data out Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)
tWC Address tAS(3) CS tAW tWP (1) WE tDW Data in
Data Valid
tCW (2)
tWR (4)
tDH
Data out
NOTES (WRITE CYCLE)
High-Z
High-Z
1. A write occurs during the overlap(t WP) of low CS and low WE. A write begins at the latest transition among CS goes low and WE goes low. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. t CW is measured from the CS going low to end of write. 3. t A S is measured from the address valid to the beginning of write. 4. t WR is measured from the end or write to the address change. tWR applied in case a write ends as CS or WE going high.
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DATA RETENTION CHARACTERISTICS
Parameter
VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time NOTES
EM641FV8FT Series
Low Power, 512Kx8 SRAM
Symbol
VDR I DR tSDR tRDR
Test Condition
ISB1 Test Condition (Chip Disabled)
1)
Min
1.5 0
Typ2)
0.5 -
Max
3.6 -
Unit
V A
VCC =1.5V, ISB1 Test Condition (Chip Disabled) 1) See data retention wave form
ns t RC -
1. See the IS B 1 measurement condition of datasheet page 4. 2. Typical values are measured at T A=25o C and not 100% tested.
DATA RETENTION WAVE FORM CS Controlled
tSDR Vcc 2.7V
Data Retention Mode
tRDR
2.2V VDR
CS > Vcc-0.2V
CS GND
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EM641FV8FT Series
Low Power, 512Kx8 SRAM
Unit : millimeters/Inches
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MEMORY FUNCTION GUIDE
EM641FV8FT Series
Low Power, 512Kx8 SRAM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory 2. Device Type 3. Density 4. Option 5. Technology 6. Operating Voltage
1. Memory Component 2. Device Type 6 ------------------------ Low Power SRAM 7 ------------------------ STRAM 3. Density 1 ------------------------- 1M 2 ------------------------- 2M 4 ------------------------- 4M 8 ------------------------- 8M 16 ----------------------- 16M 32 ----------------------- 32M 64 ----------------------- 64M 4. Mode Option 0 -------- Dual CS 1 -------- Single CS 2 -------- Multiplexed Address 3 -------- Single CS with LB,UB (tBA=tOE) 4 -------- Single CS with LB,UB (tBA=tCO) 5 -------- Dual CS with LB,UB (tBA=tOE) 6 -------- Dual CS with LB,UB (tBA=tCO) 5. Technology Blank ------------------ CMOS F ------------------------ Full CMOS 6. Operating Voltage Blank ------------------- 5V V ------------------------- 2.7V~3.6V U ------------------------- 3.0V S ------------------------- 2.5V R ------------------------- 2.0V P ------------------------- 1.8V 10
11. Power 10. Speed
9. Packages 8. Version 7. Orgainzation
7. Orginzation 8 ---------------------- x8 bit 16 ---------------------- x16 bit 32 ---------------------- x32 bit 8. Version Blank ----------------- Mother Die A ----------------------- First revision B ----------------------- Second revision C ----------------------- Third revision D ----------------------- Fourth revision E ----------------------- Fifth revision F ----------------------- Sixth revision 9. Package Blank ---------------------- FPBGA S ---------------------------- 32 sTSOP1 T ---------------------------- 32 TSOP1 U ---------------------------- 44 TSOP2 W ---------------------------- Wafer
10. Speed 45 ---------------------- 45ns 55 ---------------------- 55ns 70 ---------------------- 70ns 85 ---------------------- 85ns 10 --------------------- 100ns 12 --------------------- 120ns 11. Power LL ---------------------- Low Low Power LF ---------------------- Low Low Power (Pb-free) L ---------------------- Low Power S ---------------------- Standard Power

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